Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiN_x (0.67 ≤ x < 1.0) layers on MgO(001)

Authors

C. S. Shin, University of Illinois at Urbana-ChampaignFollow
S. Rudenja, University of Illinois at Urbana-Champaign
D. Gall, University of Illinois at Urbana-ChampaignFollow
Niklas Hellgren, University of Illinois at Urbana-ChampaignFollow
T. Y. Lee, University of Illinois at Urbana-Champaign
I. Petrov, University of Illinois at Urbana-ChampaignFollow
J. E. Greene, University of Illinois at Urbana-ChampaignFollow

Document Type

Article

Publication Date

1-1-2004

Abstract

Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.

Comments

Originally published as:

Shin, C.-S., Rudenja, S., Gall, D., Hellgren, N., Lee, T.-Y., Petrov, I., & Greene, J. E. (2004). Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67⩽x<1.0) layers on MgO(001). Journal of Applied Physics, 95(1), 356–362. https://doi.org/10.1063/1.1629155

Recommended Citation

Shin, C. S.; Rudenja, S.; Gall, D.; Hellgren, Niklas; Lee, T. Y.; Petrov, I.; and Greene, J. E., "Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiN_x (0.67 ≤ x < 1.0) layers on MgO(001)" (2004). Educator Scholarship & Departmental Newsletters. 100.
https://mosaic.messiah.edu/mps_ed/100