The Si3N4/TiN Interface: 7. Ti/TiN(001) Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy

Authors

Richard T. Haasch, University of Illinois at Urbana-Champaign
Jörg Patscheider, University of Illinois at Urbana-ChampaignFollow
Niklas Hellgren, University of Illinois at Urbana-ChampaignFollow
Ivan Petrov, University of Illinois at Urbana-ChampaignFollow
J. E. Greene, University of Illinois at Urbana-ChampaignFollow

Document Type

Article

Publication Date

12-1-2012

Abstract

X-ray photoelectron spectroscopy (XPS) was used to analyze Ti/TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition on MgO(001), with an electrically floating substrate potential of 7 V, in mixed 1:1 Ar/N2 discharges maintained at a total pressure of 0.5 Pa (3.75 × 10-3 Torr). The TiN(001) films were grown at 600 °C and the 4-ML-thick Ti overlayers at room temperature. XPS spectra were obtained using incident monochromatic Al Kα x-radiation at 0.83401 nm. Ti/TiN(001) Ti 2p spectra reveal reduced unscreened final-state satellite peaks compared to Ti 2p spectra obtained from uncapped TiN(001) due to increased electronic screening. © 2012 American Vacuum Society.

Comments

Originally published as:

Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si ₃ N ₄ /TiN Interface: 5. TiN/Si ₃ N ₄ Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy. Surface Science Spectra, 19(1), 72–81. https://doi.org/10.1116/11.20121005

Recommended Citation

Haasch, Richard T.; Patscheider, Jörg; Hellgren, Niklas; Petrov, Ivan; and Greene, J. E., "The Si3N4/TiN Interface: 7. Ti/TiN(001) Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy" (2012). Educator Scholarship & Departmental Newsletters. 86.
https://mosaic.messiah.edu/mps_ed/86