Reactive Magnetron Sputtering of CNx Thin Films on β-Si3N4 Substrates

Authors

Niklas Hellgren, Messiah UniversityFollow
Weitao ZhengFollow
Jan Eric SundgrenFollow

Document Type

Article

Publication Date

5-1-1998

Abstract

Carbon nitride CNx thin films have been deposited on polycrystalline β-Si3N4 substrates by unbalanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100-400°C. The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force microscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elastic recovery of 85% at higher substrate temperature.

Comments

Sjöström, H., Ivanov, I., Johansson, M., Hultman, L., Sundgren, J.-E., Hainsworth, S. V., Page, T. F., & Wallenberg, L. R. (1994). Reactive magnetron sputter deposition of CNx films on Si(001) substrates: Film growth, microstructure and mechanical properties. Thin Solid Films, 246(1–2), 103–109. https://doi.org/10.1016/0040-6090(94)90738-2

Recommended Citation

Hellgren, Niklas; Zheng, Weitao; and Sundgren, Jan Eric, "Reactive Magnetron Sputtering of CNx Thin Films on β-Si3N4 Substrates" (1998). Educator Scholarship & Departmental Newsletters. 4.
https://mosaic.messiah.edu/mps_ed/4