Title
N1s Electron Binding Energies of CNX Thin Films Grown by Magnetron Sputtering at Different Temperature
Document Type
Article
Publication Date
1-1-1998
Abstract
Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature Ts, in which the peak at 400.0 eV increases with Ts, whereas the peak at 398.3 eV decreases with Ts slightly. On the basis of XPS, FTIR and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp2 coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp3 coordinated C atoms as well as N≡C bonds.
Recommended Citation
Hellgren, Niklas; Zheng, Weitao; Xing, Ke-Zhi; and Ivanov, Ivan, "N1s Electron Binding Energies of CNX Thin Films Grown by Magnetron Sputtering at Different Temperature" (1998). Educator Scholarship & Departmental Newsletters. 3.
https://mosaic.messiah.edu/mps_ed/3
Comments
Originally published as:
Zheng, W. T., Xing, K. Z., Hellgren, N., Lögdlund, M., Johansson, Å., Gelivs, U., Salaneck, W. R., & Sundgren, J.-E. (1997). Nitrogen 1s electron binding energy assignment in carbon nitride thin films with different structures. Journal of Electron Spectroscopy and Related Phenomena, 87(1), 45–49. https://doi.org/10.1016/S0368-2048(97)00083-2