Electrical and Optical Properties of CNx(0⩽x⩽0.25) Films Deposited by Reactive Magnetron Sputtering

Authors

Niklas Hellgren, Messiah UniversityFollow
Esteban BroitmanFollow
Kenneth Järrendahl
Mat P.J Jõesaar
Sveinn Olafsson
György Radnóczi
Jan-Eric SundgrenFollow
Lars HultmanFollow

Document Type

Article

Publication Date

1-1-2001

Abstract

The electrical and optical properties of carbon-nitride CN_x films (0⩽x⩽0.25) deposited by unbalanced reactive magnetron sputtering from a graphite target in mixed Ar/N₂ discharges at a substrate temperature of 350 °C have been investigated. Pure C films exhibit a dark conductivity at room temperature of 25 Ω⁻¹ cm⁻¹, which grows up to 250 Ω⁻¹ cm⁻¹ for CN_x films with N content of 20%. For CN_x films, temperature-dependent conductivity measurements suggest that two electron conduction processes exist in the investigated temperature range 1302 bonds in the material. The measured electrical and optical properties of the films are related to the apparent film microstructure and bonding nature. Electron microscopy show that the addition of N₂ in an Ar discharge leads to a transformation from amorphous to a fullerene-like microstructure consisting of curved, frequently intersecting, and highly in-plane oriented basal lattice planes.

Comments

Broitman, E., Hellgren, N., Järrendahl, K., Johansson, M. P., Olafsson, S., Radnóczi, G., Sundgren, J.-E., & Hultman, L. (2001). Electrical and optical properties of CNx(0⩽x⩽0.25) films deposited by reactive magnetron sputtering. Journal of Applied Physics, 89(2), 1184–1190. https://doi.org/10.1063/1.1334370

Recommended Citation

Hellgren, Niklas; Broitman, Esteban; Järrendahl, Kenneth; Jõesaar, Mat P.J; Olafsson, Sveinn; Radnóczi, György; Sundgren, Jan-Eric; and Hultman, Lars, "Electrical and Optical Properties of CNx(0⩽x⩽0.25) Films Deposited by Reactive Magnetron Sputtering" (2001). Educator Scholarship & Departmental Newsletters. 20.
https://mosaic.messiah.edu/mps_ed/20