Vacancy hardening in single-crystal TiN_x(001) layers

Authors

C. S. Shin, University of Illinois at Urbana-ChampaignFollow
D. Gall, University of Illinois at Urbana-ChampaignFollow
Niklas Hellgren, University of Illinois at Urbana-ChampaignFollow
J. Patscheider, University of Illinois at Urbana-ChampaignFollow
I. Petrov, University of Illinois at Urbana-ChampaignFollow
J. E. Greene, University of Illinois at Urbana-ChampaignFollow

Document Type

Article

Publication Date

5-15-2003

Abstract

The phenomena of vacancy hardening in single crystal TiNx(001) layers was investigated. The linear increase in the relaxed parameter with respect x shows that deviations from stoichiometry were entirely due to anion vacancies. The vacancy hardening can be attributed to a reduced dislocation mobility arising from an increase in the rate limiting activation energy for cation migration.

Comments

Originally published as:

Shin, C.-S., Gall, D., Hellgren, N., Patscheider, J., Petrov, I., & Greene, J. E. (2003). Vacancy hardening in single-crystal TiNx(001) layers. Journal of Applied Physics, 93(10), 6025–6028. https://doi.org/10.1063/1.1568521

Recommended Citation

Shin, C. S.; Gall, D.; Hellgren, Niklas; Patscheider, J.; Petrov, I.; and Greene, J. E., "Vacancy hardening in single-crystal TiN_x(001) layers" (2003). Educator Scholarship & Departmental Newsletters. 105.
https://mosaic.messiah.edu/mps_ed/105