Characterization of the metal-insulator interface of field-effect chemical sensors

Authors

A. Elisabeth Åbom, Linköpings universitet
Richard T. Haasch, University of Illinois at Urbana-Champaign
Niklas Hellgren, University of Illinois at Urbana-ChampaignFollow
Nancy Finnegan, University of Illinois at Urbana-Champaign
Lars Hultman, Linköpings universitetFollow
Mats Eriksson, Linköpings universitet

Document Type

Article

Publication Date

6-15-2003

Abstract

The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference in hydrogen response between differently prepared devices was explained by a difference in concentration of available adsorption sites. The analysis showed that the concentration of Pt atoms in contact with the oxide affected both the hydrogen response and the metal-oxide adhesion.

Comments

Originally published as:

Åbom, A. E., Haasch, R. T., Hellgren, N., Finnegan, N., Hultman, L., & Eriksson, M. (2003). Characterization of the metal–insulator interface of field-effect chemical sensors. Journal of Applied Physics, 93(12), 9760–9768. https://doi.org/10.1063/1.1575917

Recommended Citation

Åbom, A. Elisabeth; Haasch, Richard T.; Hellgren, Niklas; Finnegan, Nancy; Hultman, Lars; and Eriksson, Mats, "Characterization of the metal-insulator interface of field-effect chemical sensors" (2003). Educator Scholarship & Departmental Newsletters. 104.
https://mosaic.messiah.edu/mps_ed/104