In-situ stress measurement during the deposition of CN_x thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation

Authors

I. F. Brunell, Linköpings universitetFollow
L. Pichon, UMR 6630 CNRS
N. Hellgren, University of Illinois at Urbana-ChampaignFollow
Zs Czigány, Linköpings universitetFollow
J. Neidhardt, Linköpings universitetFollow
L. Hultman, Linköpings universitetFollow

Document Type

Article

Publication Date

6-1-2004

Abstract

Stress development during growth of CNx films by unbalanced magnetron sputtering has been investigated with an in-situ laser deflection technique. The stress is initially tensile, then it becomes compressive, reaching a maximum of as much as 7GPa. These are anomalously high stress levels compared with pure carbon, considering the low ion energies (28 eV) and ion-to-neutral arrival rate ratio (<1) employed. This phenomenon is explained by the formation of a fullerene-like microstructure and nitrogen substitution at the growth surface. An accompanying increased reactivity of carbon atoms promotes sp3 bonding or other cross-linking of curved basal planes with resulting film densification.

Recommended Citation

Brunell, I. F.; Pichon, L.; Hellgren, N.; Czigány, Zs; Neidhardt, J.; and Hultman, L., "In-situ stress measurement during the deposition of CN_x thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation" (2004). Educator Scholarship & Departmental Newsletters. 99.
https://mosaic.messiah.edu/mps_ed/99