The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy

Authors

Richard T. Haasch, University of Illinois at Urbana-Champaign
Jörg Patscheider, University of Illinois at Urbana-ChampaignFollow
Niklas Hellgren, University of Illinois at Urbana-ChampaignFollow
Ivan Petrov, University of Illinois at Urbana-ChampaignFollow
J. E. Greene, University of Illinois at Urbana-ChampaignFollow

Document Type

Article

Publication Date

12-1-2012

Abstract

Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze as-deposited epitaxial TiN(001) layers grown in situ. The films were grown by ultrahigh vacuum reactive magnetron sputtering onto MgO(001) at 600 °C in mixed 1:1 Ar/N2 discharges maintained at a total pressure of 0.5 Pa (3.75 × 10-3 Torr). AR-XPS spectra were obtained using incident monochromatic Al Kα radiation at 0.83401 nm. The results show that the TiN(001) surfaces are free of O and C. The Ti 2p photoelectron spectra of clean TiN are characterized by 2p3/2 and 2p1/2 lines appearing at 454.7 and 460.7 eV, each with corresponding satellite lines which are shifted ∼2.6 eV to higher binding energies. © 2012 American Vacuum Society.

Recommended Citation

Haasch, Richard T.; Patscheider, Jörg; Hellgren, Niklas; Petrov, Ivan; and Greene, J. E., "The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy" (2012). Educator Scholarship & Departmental Newsletters. 89.
https://mosaic.messiah.edu/mps_ed/89