The Si3N4/TiN Interface: 3. Si3N4/TiN(001) Grown with a -150 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy

Authors

Richard T. Haasch, University of Illinois at Urbana-Champaign
Jörg Patscheider, University of Illinois at Urbana-ChampaignFollow
Niklas Hellgren, University of Illinois at Urbana-ChampaignFollow
Ivan Petrov, University of Illinois at Urbana-ChampaignFollow
J. E. Greene, University of Illinois at Urbana-ChampaignFollow

Document Type

Article

Publication Date

12-1-2012

Abstract

Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze Si3N4/TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition onto MgO(001), with a substrate potential of -150 V, in mixed 1:1 Ar/N2 discharges maintained at a total pressure of 0.5 Pa (3.75 × 10-3 Torr). The TiN(001) films were grown at 600 °C and the 4-ML-thick Si3N4 overlayers at room temperature. AR-XPS spectra were obtained using incident monochromatic Al Kα x-radiation at 0.83401 nm. Si3N4/TiN(001) Ti 2p spectra reveal enhanced unscreened final-state satellite peaks, compared to Ti 2p spectra obtained from uncapped TiN(001), due to decreased electronic screening induced by Si3N4/TiN(001) bilayer interfacial polarization. © 2012 American Vacuum Society.

Comments

Originally published as:

Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si ₃ N ₄ /TiN Interface: 3. Si ₃ N ₄ /TiN(001) Grown with a −150 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy. Surface Science Spectra, 19(1), 52–61. https://doi.org/10.1116/11.20121003

Recommended Citation

Haasch, Richard T.; Patscheider, Jörg; Hellgren, Niklas; Petrov, Ivan; and Greene, J. E., "The Si3N4/TiN Interface: 3. Si3N4/TiN(001) Grown with a -150 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy" (2012). Educator Scholarship & Departmental Newsletters. 87.
https://mosaic.messiah.edu/mps_ed/87