Transmission fourier transform infra-red spectroscopy investigation of structure property relationships in low-k SiO_xC_y:H Dielectric thin films

Authors

Sean W. King, Intel Corporation
Ebony Mays, Intel Corporation
Canay Ege, Intel Corporation
Niklas Hellgren, Intel CorporationFollow
Jessica Xu, Intel Corporation
Han Li, Intel Corporation
Boyan Boyanov, Intel Corporation

Document Type

Conference Proceeding

Publication Date

1-1-2013

Abstract

In order to understand the structure property relationships for inorganic low dielectric constant (i.e. low-k) materials, transmission Fourier Transform-Infrared (FTIR) spectroscopy has been utilized to study the local bonding structure in various plasma enhanced chemically vapor deposited low-k materials in the SiOxCy:H phase diagram. The FTIR measurements were combined with additional mechanical, electrical, and optical property measurements to elucidate the structure property relationships for these materials. The combined measurements show that increased incorporation of terminal methyl bonding results in a decrease in network bonding that manifests itself in a reduction in mass density, dielectric constant, refractive index, Young's modulus and many other important material properties. © 2012 Materials Research Society.

Comments

Originally published as:

King, S. W., Mays, E., Ege, C., Hellgren, N., Xu, J., Li, H., & Boyanov, B. (2012). Transmission fourier transform infra-red spectroscopy investigation of structure property relationships in low-k sio _x c _y :h dielectric thin films. MRS Proceedings, 1520, mrsf12-1520-nn11-04. https://doi.org/10.1557/opl.2012.1691

Recommended Citation

King, Sean W.; Mays, Ebony; Ege, Canay; Hellgren, Niklas; Xu, Jessica; Li, Han; and Boyanov, Boyan, "Transmission fourier transform infra-red spectroscopy investigation of structure property relationships in low-k SiO_xC_y:H Dielectric thin films" (2013). Educator Scholarship & Departmental Newsletters. 85.
https://mosaic.messiah.edu/mps_ed/85