Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering

Authors

C. S. Shin, University of Illinois at Urbana-ChampaignFollow
Y. W. Kim, University of Illinois at Urbana-Champaign
Niklas Hellgren, University of Illinois at Urbana-ChampaignFollow
D. Gall, University of Illinois at Urbana-ChampaignFollow
I. Petrov, University of Illinois at Urbana-ChampaignFollow
J. E. Greene, University of Illinois at Urbana-ChampaignFollow

Document Type

Article

Publication Date

11-1-2002

Abstract

An analysis of epitaxial growth of metastable δ-TaN layers on MgO(001) by the use of low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering was presented. High-resolution X-ray difftraction, transmission electron microscopy and Rutherford backscattering spectrometry was used for the analysis. The room-temperature resistivity, hardness, elastic modulus, and relaxed lattice constant were determined for the δ-TaN layers.

Comments

Originally published as:

Shin, C.-S., Kim, Y.-W., Hellgren, N., Gall, D., Petrov, I., & Greene, J. E. (2002). Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 20(6), 2007. https://doi.org/10.1116/1.1513639

Recommended Citation

Shin, C. S.; Kim, Y. W.; Hellgren, Niklas; Gall, D.; Petrov, I.; and Greene, J. E., "Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering" (2002). Educator Scholarship & Departmental Newsletters. 108.
https://mosaic.messiah.edu/mps_ed/108