Reactive Magnetron Sputtering of CNx Thin Films on β-Si3N4 Substrates
Carbon nitride CNx thin films have been deposited on polycrystalline β-Si3N4 substrates by unbalanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100-400°C. The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force microscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elastic recovery of 85% at higher substrate temperature.
Hellgren, Niklas; Zheng, Weitao; and Sundgren, Jan Eric, "Reactive Magnetron Sputtering of CNx Thin Films on β-Si3N4 Substrates" (1998). Educator Scholarship. 4.