Title
Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering
Document Type
Article
Publication Date
11-1-2002
Abstract
An analysis of epitaxial growth of metastable δ-TaN layers on MgO(001) by the use of low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering was presented. High-resolution X-ray difftraction, transmission electron microscopy and Rutherford backscattering spectrometry was used for the analysis. The room-temperature resistivity, hardness, elastic modulus, and relaxed lattice constant were determined for the δ-TaN layers.
Recommended Citation
Shin, C. S.; Kim, Y. W.; Hellgren, N.; Gall, D.; Petrov, I.; and Greene, J. E., "Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering" (2002). Educator Scholarship & Departmental Newsletters. 108.
https://mosaic.messiah.edu/mps_ed/108
