Title
Vacancy hardening in single-crystal TiNx(001) layers
Document Type
Article
Publication Date
5-15-2003
Abstract
The phenomena of vacancy hardening in single crystal TiNx(001) layers was investigated. The linear increase in the relaxed parameter with respect x shows that deviations from stoichiometry were entirely due to anion vacancies. The vacancy hardening can be attributed to a reduced dislocation mobility arising from an increase in the rate limiting activation energy for cation migration.
Recommended Citation
Shin, C. S.; Gall, D.; Hellgren, N.; Patscheider, J.; Petrov, I.; and Greene, J. E., "Vacancy hardening in single-crystal TiNx(001) layers" (2003). Educator Scholarship & Departmental Newsletters. 105.
https://mosaic.messiah.edu/mps_ed/105
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