Title

Vacancy hardening in single-crystal TiNx(001) layers

Document Type

Article

Publication Date

5-15-2003

Abstract

The phenomena of vacancy hardening in single crystal TiNx(001) layers was investigated. The linear increase in the relaxed parameter with respect x shows that deviations from stoichiometry were entirely due to anion vacancies. The vacancy hardening can be attributed to a reduced dislocation mobility arising from an increase in the rate limiting activation energy for cation migration.

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