Vacancy hardening in single-crystal TiNx(001) layers
The phenomena of vacancy hardening in single crystal TiNx(001) layers was investigated. The linear increase in the relaxed parameter with respect x shows that deviations from stoichiometry were entirely due to anion vacancies. The vacancy hardening can be attributed to a reduced dislocation mobility arising from an increase in the rate limiting activation energy for cation migration.
Shin, C. S.; Gall, D.; Hellgren, N.; Patscheider, J.; Petrov, I.; and Greene, J. E., "Vacancy hardening in single-crystal TiNx(001) layers" (2003). Educator Scholarship & Departmental Newsletters. 105.