Title

Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67 ≤ x < 1.0) layers on MgO(001)

Document Type

Article

Publication Date

1-1-2004

Abstract

Microstructure, surface morphology, relaxed lattice constants, x-ray coherence lengths, and the resistivity of NaCl-structure epitaxial understoichiometric TiNx(001) layers with controlled N concentrations were determined as a function of x. The films were grown on MgO(001) at 700°C by ultra-high-vacuum reactive sputtering of Ti in mixed Ar/N2 discharges. Further increases in fN2 have no affect on layer composition, as the films remained stoichiometric, but strongly influenced film surface morphologies.

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