Author

Hallie Miller

Date of Award

Spring 5-2018

Document Type

Thesis

Degree Name

Bachelor of Science (BS)

Department

Mathematics, Physics and Statistics

First Advisor

Dr. Niklas K. Hellgran

Abstract

Zinc-selenide, ZnSe,is aII-IV semiconductor that is known for its wide band gap of ~2.6 eV. In the growing world of advanced electronics, ZnSe thin films are useful to study in order to widen our understanding of semiconductor physics and to enable us to create and develop higher preforming electronics. In this study, we have grown ZnSe thin films by radio frequency (RF) magnetron sputtering. We are specifically seeking to understand how the ratio of Zinc to Selenium,and the temperature the films are grown at, affects the band gap and crystalline structure. Ten different ratios of Zn to Se were grown, to a thickness of roughly 300 nm, with each ratio being grown in room temperature and 300°C,respectively. The band gap was determined using Ultraviolet Visible spectroscopy (UV-Vis) and the crystalline structure was determined using X-Ray diffraction (XRD). The bandgap was not affected by the change in temperature, but it was affected by the ratio of Zinc to Selenium.

Included in

Physics Commons

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